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IXTA12N50P
IXTI12N50P
IXTP12N50P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
7.5
13
1830
182
16
22
27
65
20
29
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
11
10
nC
nC
Pins:
1 - Gate
2 - Drain
R thJC
R thCS
(TO-220)
0.50
0.62 ° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
12
48
1.5
A
A
V
t rr
Q RM
I RM
I F = 6A, -di/dt = 150A/ μ s,
V R = 100V, V GS = 0V
2.8
18.2
300 ns
μ C
A
Leaded 263 (IXTI) Outline
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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